v rrm = 200 v - 800 v i f = 100 a features ? high surge capability do-8 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol 1N3289A(r) 1n3291a(r) unit repetitive peak reverse voltage v rrm 200 400 v dc blocking voltage v dc 200 400 v continuous forward current i f 100 100 a 2. reverse polarity (r): stud is anode. ? types from 200 v to 800 v v rrm silicon standard recover y diode conditions 800 800 600 1N3289A(r) thru 1n3294a(r) t c 130 c 1n3294a(r) 600 1n3293a(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) 100 100 continuous forward current i f 100 100 a i 2 t for fusing i 2 t 60 hz half wave 22000 22000 a 2 sec operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol 1N3289A(r) 1n3291a(r) unit diode forward voltage 1.5 1.5 thermal characteristics thermal resistance, junction - case r thjc 0.40 0.40 c/w -55 to 150 -55 to 150 t c = 25 c, t p = 8.3 ms surge non-repetitive forward current, half sine wave i f,sm -55 to 150 1n3294a(r) 1n3293a(r) 0.40 0.40 1.5 1.5 v electrical characteristics, at tj = 25 c, unless otherwise specified ma reverse current i f = 100 a, t j = 130 c c conditions 2300 2300 -55 to 150 100 100 a 2300 2300 v r = v rrm , t j = 130 c 24 24 17 13 22000 22000 i r v f www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
1N3289A(r) thru 1n3294a(r) www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. 1N3289A(r) thru 1n3294a(r) do-8 (do-205aa) g d h i f b inches millimeters min max min max a 3/8-24 unf b ----- 0.930 ----- 23.5 c 1.050 1.060 26.67 26.92 d 4.300 4.700 109.22 119.38 e ----- 0.690 ----- 17.00 f 0.260 ----- 6.50 ----- g ----- 0.940 ----- 24.00 h ----- 0.600 ----- 15.23 i 0.276 0.286 7.010 7.260 a e c www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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